2N7002W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
?
?
?
?
?
?
?
?
?
Low-On Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) ?
Qualified to AEC-Q101 Standards for High Reliability
SOT-323
Drain
?
?
?
?
?
?
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
D
Gate
G
S
TOP VIEW
Ordering Information
(Notes 4)
Part Number
2N7002W -7-F
Source
Equivalent Circuit
Case
SOT-323
TOP VIEW
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
K72 = Product Type Marking Code
K72
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y ? M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y ? = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Chengdu A/T Site
Shanghai A/T Site
Year
Code
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
2018
F
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
2N7002W
Document number: DS30099 Rev. 14 - 2
1 of 4
www.diodes.com
September 2013
? Diodes Incorporated
相关PDF资料
2N7002W MOSFET N-CH 60V 115MA SOT-323
2SJ649-AZ MOSFET P-CH -60V -20A TO-220
2SJ652-RA11 MOSFET P-CH 60V 28A TO-220ML
2SJ673-AZ MOSFET P-CH -60V -36A TO-220
2SJ687-ZK-E1-AY MOSFET P-CH -20V -20A TO-252
2SK2094TL MOSFET N-CH 60V 2A DPAK
2SK3018T106 MOSFET N-CH 30V .1A SOT-323
2SK3019TL MOSFET N-CH 30V .1A SOT416
相关代理商/技术参数
2N7002W-7-F 功能描述:MOSFET 60V 200mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7002W-CUT TAPE 制造商:FAIRCHILD 功能描述:2N7002W Series 60 V 7.5 Ohms N-Ch Enhancement Field Effect Transistor SOT-23-3
2N7002W-G 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:MOSFET
2N7002WG-AL3-R 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:300m Amps, 60 Volts N-CHANNEL POWER MOSFET
2N7002WL-AL3-R 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:300m Amps, 60 Volts N-CHANNEL POWER MOSFET
2N7002WST1G 制造商:ON Semiconductor 功能描述:NFET SC70 60V 115MA 7MOHM - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / NFET SC70 60V 115MA 7MOHM
2N7002WT1G 功能描述:MOSFET SMALL SIGNAL MOSFET 6.8V LO C RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7002WT3G 功能描述:MOSFET SMALL SIGNAL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube